A gate structure is located between the source and drain, with a corresponding gate electrode on the bottom side of the SiC substrate. Source/drain contacts are formed to the N-type channel. An N-type channel region is formed in a P-type SiC body. In 1962 Lloyde Wallace at Westinghouse patented ( US3254280A), a silicon carbide unipolar transistor device. The semiconductor device potential of silicon carbide has been known for many years. The SiC MOSFET is of particular interest, due to its potential to displace existing silicon super junction (SJ) transistor and integrated gate bipolar transistor (IGBT) technology. More recently, it has found use as an electronic material, initially for light emitting diodes (LEDs) and more recently for power electronics devices, including Schottky barrier diodes (SBD’s), junction field effect transistors (JFET’s) and MOSFET transistors. The primary use for SiC has been as an abrasive material, due to its hardness, but it has found uses in automotive brake disks, as an addition to automotive lubricants, and as an alternative to diamonds for jewelry. SiC is rarely found in nature, for example in meteorites, as the mineral moissanite. Widescale production by the Carborundum Company started in 1893 following the discovery of the Acheson process, which is still being used. Silicon carbide (SiC) is a widely used industrial material.
0 Comments
Leave a Reply. |